Bias Dependence of Organic-Oxide Phototransistors with Peak Infrared Absorption at 1550 nm-Reference-Cited by-同舟云学术

Bias Dependence of Organic-Oxide Phototransistors with Peak Infrared Absorption at 1550 nm

Published:2023-11-13 Issue:11 Volume:5 Page:6401-6407
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Seo Bogyeom¹,Chung Jusung²,Eedugurala Naresh³,Azoulay Jason D.³^ORCID,Kim Hyun Jae²^ORCID,Ng Tse Nga¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, United States

2. Department of Electrical and Electronic Engineering, Yonsei University, Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

3. School of Chemistry and Biochemistry and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funder

Air Force Office of Scientific Research

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01276

Reference38 articles.

1. Infrared and Terahertz Detectors, Third Edition

2. Two-dimensional infrared and terahertz detectors: Outlook and status

3. Solution-processed semiconductors for next-generation photodetectors

4. Solution-processable infrared photodetectors: Materials, device physics, and applications

5. Organic photodiodes and phototransistors toward infrared detection: materials, devices, and applications

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