Performance Improvement of an Al/TiO<sub>2</sub>/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO<sub>2</sub> Layer-Reference-Cited by-同舟云学术

Performance Improvement of an Al/TiO₂/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO₂ Layer

Published:2022-11-07 Issue:11 Volume:4 Page:5351-5360
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Xiang Yuan¹,Park Tae Hyung¹,Hyun Seung Dam¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul 08826, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01043

Reference41 articles.

1. Emerging memories: resistive switching mechanisms and current status

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. The missing memristor found

4. Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

5. Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

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