Electronic and Optical Properties of Threading Dislocations in <i>n</i>-Type 4H-SiC-Reference-Cited by-同舟云学术

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Published:2022-04-12 Issue:4 Volume:4 Page:1678-1683
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Luo Hao¹²^ORCID,Li Jiajun¹²,Yang Guang³,Zhu Ruzhong²,Zhang Yiqiang⁴^ORCID,Wang Rong¹²^ORCID,Yang Deren¹²,Pi Xiaodong¹²^ORCID

Affiliation:

1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China

3. Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, China

4. School of Materials Science and Engineering & Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, Henan 450001, China

Funder

Zhejiang University

Ministry of Science and Technology of the People's Republic of China

Central University Basic Research Fund of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01330

Reference39 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

3. SiC materials-progress, status, and potential roadblocks

4. Fundamentals of Silicon Carbide Technology

5. Defect engineering in SiC technology for high-voltage power devices

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