Zn<sub>2</sub>SnO<sub>4</sub> Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing-Reference-Cited by-同舟云学术

Zn₂SnO₄ Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing

Published:2022-03-24 Issue:4 Volume:4 Page:1784-1793
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Shrivastava Saransh¹^ORCID,Lin Yu-Tang²,Pattanayak Bhaskar¹,Pratik Sparsh¹^ORCID,Hsu Chia-Cheng³^ORCID,Kumar Dayanand³,Lin Albert S.³^ORCID,Tseng Tseung-Yuen³^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan

3. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00033

Reference61 articles.

1. Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing

2. Improving linearity by introducing Al in HfO2 as a memristor synapse device

3. Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning

4. Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications

5. Optoelectronic Perovskite Synapses for Neuromorphic Computing

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