Control of Optical and Electrical Characteristics of BaxSn1–xO2–x Films with Bandgap Engineering as a Function of Ba:Sn Ratio
Author:
Affiliation:
1. School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Jeonbuk National University, 567 Baekjedaero, Deokjin-gu, Jeonju-si 54896, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00307
Reference32 articles.
1. Review of recent progress in multilayer solution-processed organic light-emitting diodes
2. Control of carrier injection and transport in quantum dot light emitting diodes (QLEDs) via modulating Schottky injection barrier and carrier mobility
3. Bandgap tunable Zn1−xMgxO thin films as electron transport layers for high performance quantum dot light-emitting diodes
4. Enhanced efficiency of quantum dot light-emitting diode by sol-gel derived Zn1-xMgxO electron transport layer
5. Bandgap tunable Zn1−xMgxO thin films as electron transport layers for high performance quantum dot light-emitting diodes
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