Molybdenum Disulfide Transistors Bearing All-2D-Material Interfaces: Device Performance Optimization and Influences of Interfaces and Passivation Layers-Reference-Cited by-同舟云学术

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Molybdenum Disulfide Transistors Bearing All-2D-Material Interfaces: Device Performance Optimization and Influences of Interfaces and Passivation Layers

Published:2023-10-18 Issue:11 Volume:5 Page:6384-6391
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chang Che-Jia¹²,Chen Bo-Hao³,Chang Tzu-Hsuan¹,Chang Shoou-Jinn³,Lin Shih-Yen¹²³^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

2. Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Road, Taipei 11529, Taiwan

3. Department of Electrical Engineering, National Cheng Kung University, No. 1, University Road, Tainan City 701, Taiwan

Funder

Academia Sinica

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01261

Reference37 articles.

1. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control

2. Two-dimensional materials for next-generation computing technologies

3. 2D materials for future heterogeneous electronics

4. Electric Field Effect in Atomically Thin Carbon Films

5. The rise of graphene

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