An Optically Gated Transistor Composed of Amorphous M + Ge2Se3 (M = Cu or Sn) for Accessing and Continuously Programming a Memristor
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Boise State University, 1910 University Dr., Boise, Idaho 83725, United States
Funder
Air Force Research Laboratory
Department of Electrical and Computer Engineering, Boise State University
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
http://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00034
Reference40 articles.
1. Memristor-The missing circuit element
2. Everything You Wish to Know About Memristors But Are Afraid to Ask
3. A 2M1M Crossbar Architecture: Memory
4. PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP
5. AHaH Computing–From Metastable Switches to Attractors to Machine Learning
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