Controlling Volatility and Nonvolatility of Memristive Devices by Sn Alloying-Reference-Cited by-同舟云学术

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Controlling Volatility and Nonvolatility of Memristive Devices by Sn Alloying

Published:2023-12-04 Issue:12 Volume:5 Page:6842-6849
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Passerini Elias¹^ORCID,Lewerenz Mila¹^ORCID,Csontos Miklós¹^ORCID,Jimenez Olalla Nadia¹,Keller Killian¹^ORCID,Aeschlimann Jan²^ORCID,Xie Fangqing³^ORCID,Emboras Alexandros²,Zhang Xinzhi¹,Fischer Markus¹,Fedoryshyn Yuriy¹,Luisier Mathieu²^ORCID,Schimmel Thomas³,Koch Ueli¹^ORCID,Leuthold Juerg¹^ORCID

Affiliation:

1. Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland

2. Integrated Systems Laboratory (IIS), ETH Zurich, 8092 Zurich, Switzerland

3. Institute of Applied Physics (APH), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany

Funder

Werner Siemens-Stiftung

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01275

Reference34 articles.

1. Towards spike-based machine intelligence with neuromorphic computing

2. Dynamical memristors for higher-complexity neuromorphic computing

3. Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

4. Observation of conducting filament growth in nanoscale resistive memories

5. Review of memristor devices in neuromorphic computing: materials sciences and device challenges

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices;Applied Physics Letters;2024-07-08

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