Theoretical Investigation of the Lattice Thermal Conductivities of II–IV–V2 Pnictide Semiconductors
Author:
Affiliation:
1. Departamento de Química Física, Facultad de Química, Universidad de Sevilla, Seville 41012, Spain
2. Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6DX, U.K.
Funder
European Commission
Ministerio de Ciencia e Innovaci?n
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01242
Reference62 articles.
1. Electronic Structure and Physical Properties of ABC2 (A = Zn, B = Si, Ge, Sn, and C = P, As) Ternary Pnictide Semiconductors
2. Synthesis, structure, and optoelectronic properties of II–IV–V2materials
3. Electronic structure of the ternary pnictide semiconductorsZnSiP2,ZnGeP2,ZnSnP2,ZnSiAs2, andMgSiP2
4. Criteria for improving the properties of ZnGeAs2 solar cells
5. Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistentGWcalculations
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