Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiOxCy:H) Films at the Amorphous-to-Nanocrystalline Transition Zone-Reference-Cited by-同舟云学术

Studies on the Impedance Characteristics, Dielectric Relaxation, and ac Conductivity in Silicon Oxycarbide (SiO_xC_y:H) Films at the Amorphous-to-Nanocrystalline Transition Zone

Published:2022-08-08 Issue:8 Volume:4 Page:3880-3896
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Shyam Sukalyan¹,Das Debajyoti¹^ORCID

Affiliation:

1. Energy Research Unit, School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India

Funder

Council of Scientific and Industrial Research, India

Department of Science and Technology, Ministry of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00543

Reference70 articles.

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4. A Novel Low-Cost, High-Efficiency Micromachined Silicon Solar Cell

5. Light trapping in thin film silicon solar cells via phase separated disordered nanopillars

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