Low-Cost, High-Gain MoS2 FETs from Amorphous Low-Mobility Film Precursors
Author:
Affiliation:
1. Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Aghia Paraskevi, Athens 15310, Greece
2. Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
Funder
European Social Fund
Greece Government
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01253
Reference61 articles.
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4. Paul, J.; Mondai, C.; Biswas, A. In Impact of channel length and thickness on the short channel effects of GeOI MOSFETs, 2nd International Conference on Emerging Technology Trends in Electronics, Communication and Networking IEEE, 2014; pp 1–4.
5. Properties, Preparation and Applications of Low Dimensional Transition Metal Dichalcogenides
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