Cluster Size Control toward High Performance Solution Processed InGaZnO Thin Film Transistors-Reference-Cited by-同舟云学术

Cluster Size Control toward High Performance Solution Processed InGaZnO Thin Film Transistors

Published:2019-12-05 Issue:12 Volume:1 Page:2483-2488
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Wang Zhengxu¹,Xu Guangwei¹,Zhao Zhiyu¹,Cai Le¹,Wu Quantan¹,Cheng Pei¹^ORCID,Zhao Yepin¹,Xue Jingjing¹^ORCID,Wang Rui¹,Liu Chong²^ORCID,Yang Yang¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States

2. Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States

3. Department of Engineering, West Lake University, Hangzhou 310012, China

Funder

MOTech Inc.

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00653

Reference30 articles.

1. Solution-processed metal-oxide thin-film transistors: a review of recent developments