Thermal Shock Life Prediction of the SiC Wide Bandgap Power Module Semiconductor Package Considering Creep Behavior of the Ag Sintered Interconnect and Viscoelastic Properties of the Epoxy Molding Compound-Reference-Cited by-同舟云学术

Thermal Shock Life Prediction of the SiC Wide Bandgap Power Module Semiconductor Package Considering Creep Behavior of the Ag Sintered Interconnect and Viscoelastic Properties of the Epoxy Molding Compound

Published:2023-10-09 Issue:10 Volume:5 Page:5513-5526
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jang Yong-Rae¹,Park Sang-Jun¹,Baek Jeong-Hyeon¹,Kim Tae-Hwa²,Kim Hak-Sung¹³^ORCID

Affiliation:

1. Department of Mechanical Convergence Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

2. Hyundai Motors R&D Division, 150 Hyundaiyeonguso-ro, Namyang-eup, Hwaseong-si 18280, Gyeonggi-do, Republic of Korea

3. Institute of Nano Science and Technology, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea

Funder

Korea Institute of Energy Technology Evaluation and Planning

Hyundai Motor Group

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00763

Reference67 articles.

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5. A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver