Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors-Reference-Cited by-同舟云学术

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Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Published:2019-03-12 Issue:4 Volume:1 Page:538-547
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Song Yu¹²^ORCID,Zhang Ying¹²,Liu Yang¹²,Zhao Jie¹²,Meng Dechao¹²,Zhou Hang¹²,Wang Xiaofeng¹²,Lan Mu¹²,Wei Su-Huai³^ORCID

Affiliation:

1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, P. R. China

2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, P. R. China

3. Beijing Computational Science Research Center, Beijing 100193, P. R. China

Funder

National Natural Science Foundation of China

Science Challenge Project

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00005

Reference53 articles.

1. Proton radiation response mechanisms in bipolar analog circuits

2. Analytical model for proton radiation effects in bipolar devices

3. The effects of neutron irradiation on gamma sensitivity of linear integrated circuits

4. Combined Radiation Effects of Protons and Electrons on NPN Transistors

5. Synergistic Radiation Effects on PNP Transistors Caused by Protons and Electrons

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4. Mechanisms and Models for the Suppressed Defect Dynamics in SiO ₂ –Si Structures under High‐To‐Low Switched Dose Rate Irradiations;physica status solidi (a);2022-12-14

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