Phase Change via Intermediary Metastable Local Structure of Ge Atoms in Ge2Sb2Te5 Nanowires during Electrical Switching-Reference-Cited by-同舟云学术

Phase Change via Intermediary Metastable Local Structure of Ge Atoms in Ge2Sb2Te5 Nanowires during Electrical Switching

Published:2020-07-31 Issue:8 Volume:2 Page:2418-2428
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ahn Min¹²,Oh Jin-Su³^ORCID,Park Dambi¹,Jung Hoon¹,Park Sungjin¹⁴,Jeong Kwangsik¹^ORCID,Kim Dasol¹,Sung Nark-Eon⁵,Lee Kug-Seung⁵^ORCID,Yang Cheol-Woong³^ORCID,Cho Mann-Ho¹^ORCID

Affiliation:

1. Department of Physics, Yonsei University, Seoul 03722, Republic of Korea

2. Research & Development Process Team, SK Hynixinc., Icheon-si 17336, Republic of Korea

3. School of Advanced Material Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Process Development Team, Semiconductor R&D Center, Samsung, Hwaseong-si 18448, Republic of Korea

5. Pohang Accelerator Laboratory, POSTECH, Pohang 790-784, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00370

Reference43 articles.

1. Understanding the phase-change mechanism of rewritable optical media

2. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

3. Direct imaging of crystal structure and defects in metastable Ge2Sb2Te5 by quantitative aberration-corrected scanning transmission electron microscopy

4. Phase-change random access memory: A scalable technology

5. Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films

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