Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response-Reference-Cited by-同舟云学术

Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response

Published:2021-11-20 Issue:12 Volume:3 Page:5278-5286
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Dou Hongyi¹,Gao Xingyao¹,Zhang Di¹,Dhole Samyak²,Qi Zhimin¹,Yang Bo¹,Hasan Md Nazmul²,Seo Jung-Hun²^ORCID,Jia Quanxi²,Hellenbrand Markus³^ORCID,MacManus-Driscoll Judith L.³^ORCID,Zhang Xinghang¹^ORCID,Wang Haiyan¹⁴^ORCID

Affiliation:

1. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States

2. Department of Materials Design and Innovation, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States

3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.

4. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funder

Engineering and Physical Sciences Research Council

Royal Academy of Engineering

Leverhulme Trust

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00791

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3. Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells

4. Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence

5. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

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