Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique-Reference-Cited by-同舟云学术

Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Published:2021-06-02 Issue:6 Volume:3 Page:2729-2737
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Papakonstantinopoulos Charalampos¹^ORCID,Bousoulas Panagiotis¹,Tsigkourakos Menelaos¹,Sakellaropoulos Dionisis¹,Sygellou Labrini²^ORCID,Tsoukalas Dimitris¹^ORCID

Affiliation:

1. School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Iroon Polytechniou 9, 15772 Zografou, Greece

2. Foundation of Research and Technology, Hellas/Institute of Chemical Engineering Sciences, Stadiou Str., Platani, 26504 Patras, Greece

Funder

General Secretariat for Research and Technology

European Regional Development Fund

Hellenic Foundation for Research and Innovation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00302

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1. In‐Memory Eigenvector Computation in Time O (1)

2. Conductive-bridging random access memory: challenges and opportunity for 3D architecture

3. Emerging neuromorphic devices

4. Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States

5. Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application

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