Effect of Excess Carriers on the Degradation of InP-Based Quantum-Dot Light-Emitting Diodes-Reference-Cited by-同舟云学术

Effect of Excess Carriers on the Degradation of InP-Based Quantum-Dot Light-Emitting Diodes

Published:2022-12-02 Issue:12 Volume:4 Page:6229-6236
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kim Kyunghwan¹,Hahm Donghyo²,Baek Geun Woo¹,Lee Taesoo¹,Shin Doyoon²,Lim Jaemin²,Bae Wan Ki²,Kwak Jeonghun¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea

2. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Seobu-ro, Jangan-gu, Suwon-si 16419, Gyeonggi-do, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Seoul National University

Samsung Display

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01351

Reference46 articles.

1. Use of quantum dots for live cell imaging

2. Colloidal quantum dot solar cells

3. A colloidal quantum dot infrared photodetector and its use for intraband detection

4. Optically pumped colloidal-quantum-dot lasing in LED-like devices with an integrated optical cavity

5. Optimizing spectral quality with quantum dots to enhance crop yield in controlled environments

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