Coexistence of Surface Electronic Confinement and Topological States in Sb<sub>4</sub>Te<sub>3</sub>-Reference-Cited by-同舟云学术

Coexistence of Surface Electronic Confinement and Topological States in Sb₄Te₃

Published:2024-07-10 Issue:7 Volume:6 Page:5347-5358
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Barreto Rafael R.¹^ORCID,Rodrigues-Fontenele Guilherme¹^ORCID,Freitas Luisa V. C.¹,Marçal Lucas A. B.²^ORCID,Silva Wendell S. e²,Rodrigues-Junior Gilberto³,Miquita Douglas R.⁴,Ali Khadiza⁵,Carbone Dina⁵,Mazzoni Mario S. C.¹^ORCID,Malachias Angelo¹^ORCID,Magalhaes-Paniago Rogerio¹^ORCID

Affiliation:

1. Physics Department, Federal University of Minas Gerais, Av. Pres. Antônio Carlos 6627, 31270-901 Belo Horizonte, MG, Brazil

2. Brazilian Synchrotron Light Laboratory, Center for Research in Energy and Materials, R. Giuseppe Máximo Scolfaro 10000, 13083-970 Campinas, Brazil

3. Physics Department, Federal University of Viçosa, CEP 36570-000 Viçosa, MG, Brazil

4. Microscopy Center, Federal University of Minas Gerais, 31270-901 Belo Horizonte, MG, Brazil

5. MAX IV Laboratory, Fotongatan 2, 224 84 Lund, Sweden

Funder

Instituto Nacional de Ci?ncia e Tecnologia em Nanomateriais de Carbono

Funda??o de Amparo ? Pesquisa do Estado de Minas Gerais

Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico

Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00979

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