Temperature-Dependent Subcycling Behavior of Si-Doped HfO2 Ferroelectric Thin Films-Reference-Cited by-同舟云学术

Temperature-Dependent Subcycling Behavior of Si-Doped HfO2 Ferroelectric Thin Films

Published:2021-05-14 Issue:5 Volume:3 Page:2415-2422
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Shuaidong¹,Zhou Dayu¹^ORCID,Shi Zhixin¹,Hoffmann Michael²^ORCID,Mikolajick Thomas²³,Schroeder Uwe²^ORCID

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

2. NaMLab gGmbH, Noethnitzer Strasse 64a, 01187 Dresden, Germany

3. Chair of Nanoelectronic Materials, TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany

Funder

National Natural Science Foundation of China

Electronic Component Systems for European Leadership Joint Undertaking

DAAD Funding program (Research Stays for University Academics and Scientists)

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00330

Reference54 articles.

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4. Pešić, M.; Knebel, S.; Hoffmann, M.; Richter, C.; Mikolajick, T.; Schroeder, U. In How to Make DRAM Non-Volatile? Anti-Ferroelectrics: A New Paradigm for Universal Memories, IEEE International Electron Devices Meeting (IEDM); IEEE: San Francisco, CA, USA, 2016; pp 298–301.

5. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films

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