Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI3:Ag/SnO2/PEDOT:PSS Hybrid Structure-Reference-Cited by-同舟云学术

Stable Terahertz In Situ Photo-Writable Electrically Erasable Memory with a CsPbI3:Ag/SnO2/PEDOT:PSS Hybrid Structure

Published:2021-02-11 Issue:2 Volume:3 Page:1006-1014
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Liu Bin¹,Liu Jingyu¹,Lv Longfeng²,Hou Yanbing³^ORCID,Shen Jingling¹,Zhang Bo¹^ORCID

Affiliation:

1. Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing Key Laboratory of Metamaterials and Devices, Advanced Innovation Center for Imaging Technology, Department of Physics, Capital Normal University, Beijing 100048, China

2. Institution of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China

Funder

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

High-level Teachers in Beijing Municipal Universities in the Period of 13th Five?year Plan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01088

Reference58 articles.

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