Single Carbon Nanotube Transistor at GHz Frequency-Reference-Cited by-同舟云学术

Single Carbon Nanotube Transistor at GHz Frequency

Published:2008-01-30 Issue:2 Volume:8 Page:525-528
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chaste J.¹,Lechner L.¹,Morfin P.¹,Fève G.¹,Kontos T.¹,Berroir J.-M.,¹,Glattli D. C.¹,Happy H.¹,Hakonen P.¹,Plaçais B.¹

Affiliation:

1. Laboratoire Pierre Aigrain, Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France, Laboratoire associé aux universités Pierre et Marie Curie et Denis Diderot, CNRS UMR8551, France, Low Temperature Laboratory, Helsinki University of Technology, Otakaari 3A, Espoo, 02015 Finland, Service de Physique de l'Etat Condensé, CEA Saclay, F-91191 Gif-sur-Yvette, France, and Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS UMR8520, BP 60069, Avenue Poincaré, 59652, Villeneuve d'Asq,...

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0727361

Reference20 articles.

1. Ballistic carbon nanotube field-effect transistors

2. AC performance of nanoelectronics: towards a ballistic THz nanotube transistor

3. Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors

4. Ultrahigh Frequency Carbon Nanotube Transistor Based on a Single Nanotube

5. Frequency dependent characterization of transport properties in carbon nanotube transistors

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