Thermoelectric Performance Enhancement of Vanadium Doped n-Type In2O3 Ceramics via Carrier Engineering and Phonon Suppression
Author:
Affiliation:
1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaem.9b02011
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