Band Structure Modification and Mass Fluctuation Effects of Isoelectronic Germanium-Doping on Thermoelectric Properties of ZrNiSn-Reference-Cited by-同舟云学术

Band Structure Modification and Mass Fluctuation Effects of Isoelectronic Germanium-Doping on Thermoelectric Properties of ZrNiSn

Published:2019-12-19 Issue:2 Volume:3 Page:1349-1357
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Johari Kishor Kumar¹²,Bhardwaj Ruchi¹²,Chauhan Nagendra S.³^ORCID,Gahtori Bhasker¹²^ORCID,Bathula Sivaiah¹²⁴,Auluck Sushil¹,Dhakate S. R.¹²

Affiliation:

1. CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India

2. Academy of Scientific & Innovative Research (AcSIR), CSIR-NPL Campus, New Delhi 110012, India

3. Department of Micro & Nanofabrication, International Iberian Nanotechnology Laboratory (INL), Braga 4715-330, Portugal

4. School of Minerals, Metallurgical and Materials Engineering, Indian Insitutute of Technology (IIT) Bhubaneswar, Bhubaneswar 752050, India

Funder

Council of Scientific and Industrial Research

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.9b01740

Reference69 articles.

1. On the Phase Separation in n-Type Thermoelectric Half-Heusler Materials

2. Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

3. Skutterudites, a most promising group of thermoelectric materials

4. Thermoelectric silicides: A review

5. New bulk Materials for Thermoelectric Power Generation: Clathrates and Complex Antimonides

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