Electrode Potential-Dependent Acceptor Images in p-MoSe2 Observed by Electrochemical Scanning Tunneling Microscopy-Reference-Cited by-同舟云学术

Electrode Potential-Dependent Acceptor Images in p-MoSe2 Observed by Electrochemical Scanning Tunneling Microscopy

Published:1998-06-16 Issue:14 Volume:14 Page:3723-3726
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Ohmori Takashi¹,Cabrera Carlos R.¹

Affiliation:

1. Department of Chemistry and Materials Research Center, P.O. Box 23346, University of Puerto Rico, Río Piedras Campus, San Juan, Puerto Rico 00931-3346

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la980106w

Reference14 articles.

1. Photoelectrochemistry and Photovoltaics of Layered Semiconductors; Aruchamy, A., Ed.; Physics and Chemistry of Materials with Low-Dimensional Structures 14; Kluwer Academic Publishers: Dordrecht, 1992.

2. Electrochemistry and photochemistry of MoS2 layer crystals. I

3. Anisotropic photocorrosion of n-type MoS2 MoSe2, and WSe2 single crystal surfaces: the role 0f cleavage steps, line and screw dislocations

4. Adding H2O to study in situ anisotropically enhanced photo-oxidation at n-MoS2/CH3CN interfaces using a scanning tunneling microscope

5. Photoelectrochemistry and Surface Studies of Copper Interaction with Rough Surfaces of p ‐ MoSe2

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