Toward Intrinsic Room-Temperature Ferromagnetism in Two-Dimensional Semiconductors-Reference-Cited by-同舟云学术

Toward Intrinsic Room-Temperature Ferromagnetism in Two-Dimensional Semiconductors

Published:2018-08-21 Issue:36 Volume:140 Page:11519-11525
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Huang Chengxi¹^ORCID,Feng Junsheng²,Wu Fang³,Ahmed Dildar¹,Huang Bing⁴,Xiang Hongjun²⁵,Deng Kaiming¹,Kan Erjun¹^ORCID

Affiliation:

1. Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P.R. China

2. Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, P.R. China

3. School of Science, Nanjing Forestry University, Nanjing, Jiangsu 210037, P.R. China

4. Beijing Computational Science Research Center, Beijing 100193, P.R. China

5. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, P.R. China

Funder

Program for New Century Excellent Talents in University

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Jiangsu Province

Shanghai Municipal Education Commission

Ministry of Industry and Information Technology of the People's Republic of China

National Natural Science Foundation of China

China Academy of Engineering Physics