Air-Stable Black Phosphorus Devices for Ion Sensing-Reference-Cited by-同舟云学术

Air-Stable Black Phosphorus Devices for Ion Sensing

Published:2015-10-30 Issue:44 Volume:7 Page:24396-24402
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Peng¹,Zhang Dongzhi²,Liu Jingjing²,Chang Hongyan²,Sun Yan’e²,Yin Nailiang²

Affiliation:

1. State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instruments, Tsinghua University, Beijing 100084, China

2. College of Information and Control Engineering, China University of Petroleum (East China), Qingdao 266580, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b07712

Reference31 articles.

1. Black phosphorus field-effect transistors

2. In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus

3. Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

4. Thermal conduction in single-layer black phosphorus: highly anisotropic?

5. Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

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