Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant-Reference-Cited by-同舟云学术

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Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

Published:2016-02-23 Issue:9 Volume:8 Page:6127-6136
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ismail M.¹,Ahmed E.¹,Rana A. M.¹,Hussain F.¹,Talib I.¹,Nadeem M. Y.¹,Panda D.²,Shah N.A.³

Affiliation:

1. Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan

2. Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Orrisa India

3. Thin films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad 45320, Pakistan

Funder

Higher Education Commission, Pakistan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b11682

Reference45 articles.

1. Memristive devices for computing

2. Forming-free bipolar resistive switching in nonstoichiometric ceria films

3. Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO x /GdO x /W cross-point memories

4. Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

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