Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device-Reference-Cited by-同舟云学术

Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device

Published:2015-06-23 Issue:26 Volume:7 Page:14211-14222
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Saha Sanjit¹²,Jana Milan¹²,Khanra Partha³,Samanta Pranab¹²,Koo Hyeyoung⁴,Murmu Naresh Chandra¹²,Kuila Tapas¹

Affiliation:

1. Surface Engineering & Tribology Division, Council of Scientific and Industrial Research-Central Mechanical Engineering Research Institute, Durgapur 713209, India

2. Academy of Scientific and Innovative Research (AcSIR), Anusandhan Bhawan, 2 Rafi Marg, New Delhi 110001, India

3. Soft Innovative Materials Research Centre, Korea Institute of Science and Technology (KIST), Jeonbuk 565905, South Korea

4. Soft Innovative Materials Research Centre, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk 565905, South Korea

Funder

Department of Science and Technology, Ministry of Science and Technology

Council of Scientific and Industrial Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b03562

Reference41 articles.

1. Nitrogen-Doped Graphene as Efficient Metal-Free Electrocatalyst for Oxygen Reduction in Fuel Cells

2. A facile preparation route for boron-doped graphene, and its CdTe solar cell application