Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices-Reference-Cited by-同舟云学术

Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

Published:2015-12-16 Issue:51 Volume:7 Page:28207-28214
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Velusamy Tamilselvan¹,Mitra Somak¹,Macias-Montero Manuel¹,Svrcek Vladimir²,Mariotti Davide¹

Affiliation:

1. Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), Ulster University, Shore Road, Jordanstown BT37 0QB, U.K.

2. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, 305-8568, Japan

Funder

Engineering and Physical Sciences Research Council

University of Ulster

Leverhulme Trust

Invest Northern Ireland

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06577

Reference49 articles.

1. Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum

2. Direct generation of multiple excitons in adjacent silicon nanocrystals revealed by induced absorption

3. Step-like enhancement of luminescence quantum yield of silicon nanocrystals

4. Surface-engineered silicon nanocrystals

5. 13% Efficiency Hybrid Organic/Silicon-Nanowire Heterojunction Solar Cell via Interface Engineering

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