Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film
Author:
Affiliation:
1. School of Physics, Chongqing University, Shapingba, Chongqing 401331, People’s Republic of China
2. School of media and mathematics & Physics, Jilin Engineering Normal University, Changchun 130052, People’s Republic of China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b11326
Reference58 articles.
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4. Nanostructured WO3/BiVO4Heterojunction Films for Efficient Photoelectrochemical Water Splitting
5. MoS2/CdS Heterojunction with High Photoelectrochemical Activity for H2 Evolution under Visible Light: The Role of MoS2
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