Origin of Enhanced Hole Injection in Organic Light-Emitting Diodes with an Electron-Acceptor Doping Layer: p-Type Doping or Interfacial Diffusion?-Reference-Cited by-同舟云学术

Origin of Enhanced Hole Injection in Organic Light-Emitting Diodes with an Electron-Acceptor Doping Layer: p-Type Doping or Interfacial Diffusion?

Published:2015-05-26 Issue:22 Volume:7 Page:11965-11971
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Lei¹,Zu Feng-Shuo¹,Deng Ya-Li¹,Igbari Femi¹,Wang Zhao-Kui¹,Liao Liang-Sheng¹

Affiliation:

1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215123, China

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Jiangsu Province

Priority Academic Program Development of Jiangsu Higher Education Institutions

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b01989

Reference47 articles.