Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications-Reference-Cited by-同舟云学术

Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

Published:2015-12-04 Issue:49 Volume:7 Page:27306-27313
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhu Hao¹²,Pookpanratana Sujitra J.²,Bonevich John E.³,Natoli Sean N.⁴,Hacker Christina A.²,Ren Tong⁴,Suehle John S.²,Richter Curt A.²,Li Qiliang¹

Affiliation:

1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030, United States

2. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States

3. Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States

4. Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, United States

Funder

Division of Chemistry

Division of Electrical, Communications and Cyber Systems

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b08517

Reference33 articles.

1. Future Directions and Challenges for ETox Flash Memory Scaling

2. Semiconductor Industry Assoc. International Technology Roadmap for Semiconductors(2011Edition):Emerging Research Devices; Pages 1–4; and Page 6, Table ERD3, 2011.

3. A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology

4. Recent results on organic-based molecular memories

5. Molecular Nanoelectronics

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A S=3/2 Cr(III) Complex In A Square‐Capping NHC Framework;ChemistrySelect;2024-05-02

2. Organometallics in molecular junctions: conductance, functions, and reactions;Dalton Transactions;2024

3. Ag-dispersive chalcogenide media for readily activated electronic memristor;Applied Surface Science;2024-01

4. Synthesis, structural and spectroscopic analysis of Ru(II)(dppe)2 mono-alkynyl compounds bearing N-R-1,8-napthalimide substituent;Journal of Organometallic Chemistry;2023-10

5. Bisaryl and Bisalkynyl Diruthenium (III,III) Compounds Based on an Electron-Deficient Building Block;Inorganic Chemistry;2022-09-09