Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires-Reference-Cited by-同舟云学术

Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires

Published:2015-09-23 Issue:39 Volume:7 Page:21819-21827
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Sungjin¹,Park Dambi¹,Jeong Kwangsik¹,Kim Taeok¹,Park SeungJong¹,Ahn Min¹,Yang Won Jun¹,Han Jeong Hwa¹,Jeong Hong Sik²,Jeon Seong Gi³,Song Jae Yong⁴,Cho Mann-Ho¹

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 Korea

2. School of Integrated Technology, Yonsei University, Incheon, 406-840 Korea

3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea

4. Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b05703

Reference34 articles.

1. Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films

2. Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction

3. Rapid-heating of energetic materials using a micro-differential scanning calorimeter

4. Non-volatile storage

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