GaN Nanorod Schottky and p−n Junction Diodes-Reference-Cited by-同舟云学术

GaN Nanorod Schottky and p−n Junction Diodes

Published:2006-11-02 Issue:12 Volume:6 Page:2893-2898
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Deb Parijat¹,Kim Hogyoung¹,Qin Yexian¹,Lahiji Roya¹,Oliver Mark¹,Reifenberger Ronald¹,Sands Timothy¹

Affiliation:

1. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, Department of Physics, Purdue University, West Lafayette, Indiana 47907, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl062152j

Reference31 articles.

1. Nanoscale Science and Technology: Building a Big Future from Small Things

2. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

3. Synthesis of GaN–carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere

4. Large-Scale Catalytic Synthesis of Crystalline Gallium Nitride Nanowires

5. Formation of GaN nanorods by a sublimation method

Cited by 86 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Schottky contacts to GaN: Theoretical study and a brief review;AIP Advances;2023-08-01

2. Extremely high frequency Schottky diodes based on single GaN nanowires;Nanotechnology;2023-03-30

3. Asymmetric bias-induced barrier lowering as an alternative origin of current rectification in geometric diodes;Communications Physics;2021-11-04

4. Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector;Semiconductor Science and Technology;2021-02-04

5. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices;Surfaces and Interfaces;2020-12