Probing Occupied States of the Molecular Layer in Au−Alkanedithiol−GaAs Diodes-Reference-Cited by-同舟云学术

Probing Occupied States of the Molecular Layer in Au−Alkanedithiol−GaAs Diodes

Published:2005-03-01 Issue:12 Volume:109 Page:5719-5723
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Hsu Julia W. P.¹,Lang David V.¹,West Kenneth W.¹,Loo Yueh-Lin¹,Halls Mathew D.¹,Raghavachari Krishnan¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974, Department of Chemical Engineering, University of Texas, Austin, Texas, and Department of Chemistry, Indiana University, Bloomington, Indiana 47405

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp044246s

Reference27 articles.

1. Attaching Organic Layers to Semiconductor Surfaces

2. Molecular control over Au/GaAs diodes

3. Sze, S. M. Metal-Semiconductor Contacts.Physics of SemiconductorDevices,2nd ed.; Wiley: New York, 1981; Ch. 5, p 288.

4. In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces

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