Polarization Switching Ability Dependent on Multidomain Topology in a Uniaxial Organic Ferroelectric-Reference-Cited by-同舟云学术

Polarization Switching Ability Dependent on Multidomain Topology in a Uniaxial Organic Ferroelectric

Published:2013-12-12 Issue:1 Volume:14 Page:239-243
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kagawa Fumitaka¹²³,Horiuchi Sachio²⁴,Minami Nao³,Ishibashi Shoji²⁵,Kobayashi Kensuke⁶,Kumai Reiji²⁶,Murakami Youichi⁶,Tokura Yoshinori¹³

Affiliation:

1. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

2. CREST, Japan Science and Technology Agency (JST), Tokyo 102-0076, Japan

3. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan

4. Flexible Electronics Research Center (FLEC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan

5. Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan

6. Condensed Matter Research Center (CMRC) and Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801, Japan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl403828u

Reference31 articles.

1. Ferroelectric Memories

2. Domain wall nanoelectronics

3. Domains in Ferroic Crystals and Thin Films

4. Head-to-head and tail-to-tail180°domain walls in an isolated ferroelectric

5. Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

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