GaAs:Mn Nanowires Grown by Molecular Beam Epitaxy of (Ga,Mn)As at MnAs Segregation Conditions-Reference-Cited by-同舟云学术

GaAs:Mn Nanowires Grown by Molecular Beam Epitaxy of (Ga,Mn)As at MnAs Segregation Conditions

Published:2007-08-25 Issue:9 Volume:7 Page:2724-2728
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Sadowski Janusz¹,Dłużewski Piotr¹,Kret Sławomir¹,Janik Elżbieta¹,Łusakowska Elżbieta¹,Kanski Janusz¹,Presz Adam¹,Terki Ferial¹,Charar Salam¹,Tang Dong¹

Affiliation:

1. Groupe d'Etude des Semiconducteurs, Université de Montpellier 2, 34095 Montpellier, France, Institute of Physics, Polish Academy of Sciences, Al. Lotnikòw 32/46, 02-668 Warszawa, Poland, MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund, Sweden, Department of Applied Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden, Institute of High Pressure Physics (UNIPRESS), Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland, and FEI Company, NL-5600 MD Eindhoven,...

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl071190f

Reference31 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. One-dimensional Steeplechase for Electrons Realized

3. Nanowire Single-Electron Memory

4. Size Dependence of Gas Sensitivity of ZnO Nanorods

5. Silicon nanowires for high-sensitivity glucose detection

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