Resistive Molecular Memories: Influence of Molecular Parameters on the Electrical Bistability-Reference-Cited by-同舟云学术

Resistive Molecular Memories: Influence of Molecular Parameters on the Electrical Bistability

Published:2009-04-17 Issue:18 Volume:131 Page:6591-6598
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Di Motta Simone¹,Di Donato Eugenio¹,Negri Fabrizia¹,Orlandi Giorgio¹,Fazzi Daniele¹,Castiglioni Chiara¹

Affiliation:

1. Dipartimento di Chimica “G. Ciamician”, Università di Bologna, Via F. Selmi, 2, 40126 Bologna, Italy, and INSTM, UdR Bologna, Italy, and Dipartimento di Chimica, Materiali e Ingegneria Chimica, Politecnico di Milano, “G. Natta”, P.zza Leonardo da Vinci 32, 20133 Milano, Italy, and INSTM, UdR Milano, Italy

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja901101c

Reference60 articles.

1. Reversible switching in phase-change materials

2. Polymer electronic memories: Materials, devices and mechanisms

3. Nonvolatile Memory Elements Based on Organic Materials

4. Tuning of electrical bistability in organic devices through electrochemical potential of metal contacts

5. Metal∕organic∕metal bistable memory devices

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