Bending of GaAs–InP Core–Shell Nanowires by Asymmetric Shell Deposition: Implications for Sensors
Author:
Affiliation:
1. Department of Engineering Physics, McMaster University, Hamilton L8S 4L7, Canada
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c01636
Reference36 articles.
1. Approaching the ideal elastic strain limit in silicon nanowires
2. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
3. Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates
4. Strain distribution in bent ZnO microwires
5. Tailoring Exciton Dynamics by Elastic Strain-Gradient in Semiconductors
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cu–Ni Bimetallic Nanowires with Various Structures Originating from Ni Reduction Kinetics;Nano Letters;2024-09-13
2. Stemless InSb nanowire networks and nanoflakes grown on InP;Nanotechnology;2024-07-24
3. An energy‐based finite‐strain model for 3D heterostructured materials and its validation by curvature analysis;International Journal for Numerical Methods in Engineering;2024-06-19
4. Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core–shell nanowires monitored by in situ x-ray diffraction;Nanotechnology;2024-05-01
5. Direct growth of lattice mismatched InP on GaAs substrate with AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer;Materials Science in Semiconductor Processing;2024-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3