Energy Level Alignment at the Fullerene/Titanium Oxide Ultrathin Film Interface
Author:
Affiliation:
1. Peter Grünberg Institut (PGI-7) and JARA-FIT, Forschungszentrum Jülich GmbH, Wilhelm-Johnen Str., 52425 Jülich, Germany
2. IWE2 and JARA-FIT, RWTH Aachen University, Sommerfeldstraße 24, 52056 Aachen, Germany
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b11386
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1. Solution-Processed Zinc Oxide as High-Performance Air-Stable Electron Injector in Organic Ambipolar Light-Emitting Field-Effect Transistors
2. Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates
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4. Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
5. Experimental demonstration of the universal energy level alignment rule at oxide/organic semiconductor interfaces
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