The Role of M3+ Substitutional Doping (M = In, Sb, Bi) in the Passivation of the α-CsPbI3(100) Surface
Author:
Affiliation:
1. Department of Physics, Federal University of São Carlos, 13565-905 São Carlos, São Paulo, Brazil
2. São Carlos Institute of Chemistry, University of São Paulo, P.O. Box 780, 13560-970 São Carlos, São Paulo, Brazil
Funder
Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico
Ag?ncia Nacional do Petr?leo, G?s Natural e Biocombust?veis
Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo
Shell
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c07332
Reference64 articles.
1. Growth mechanism of strongly emitting CH3NH3PbBr3 perovskite nanocrystals with a tunable bandgap
2. Hybrid organic—inorganic perovskites: low-cost semiconductors with intriguing charge-transport properties
3. Charge-Carrier Mobilities in Metal Halide Perovskites: Fundamental Mechanisms and Limits
4. Electron-hole diffusion lengths > 175 μm in solution-grown CH 3 NH 3 PbI 3 single crystals
5. Carrier Diffusion Lengths of over 500 nm in Lead-Free Perovskite CH3NH3SnI3 Films
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