Electronic Structure of Folded Hexagonal Boron Nitride
Author:
Affiliation:
1. Nantes Université, CNRS, Institut des Matériaux de Nantes Jean Rouxel, IMN, F-44000 Nantes, France
2. Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France
Funder
Agence Nationale de la Recherche
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c05549
Reference54 articles.
1. Hexagonal boron nitride is an indirect bandgap semiconductor
2. Huge Excitonic Effects in Layered Hexagonal Boron Nitride
3. Excitons in Boron Nitride Nanotubes: Dimensionality Effects
4. Boron nitride substrates for high-quality graphene electronics
5. Theory of phonon-assisted luminescence in solids: Application to hexagonal boron nitride
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