Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene-Reference-Cited by-同舟云学术

Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene

Published:2020-10-22 Issue:44 Volume:124 Page:24066-24072
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Gómez-Pérez Juan F.¹^ORCID,Correa Julián D.²,Pravda Cora Bartus¹,Kónya Zoltán¹³^ORCID,Kukovecz Ákos¹^ORCID

Affiliation:

1. Interdisciplinary Excellence Centre, Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla tér 1, H-6720 Szeged, Hungary

2. Universidad de Medellín, Facultad de Ciencias Básicas, Medellín 050026 Colombia

3. MTA-SZTE Reaction Kinetics and Surface Chemistry Research Group, University of Szeged, Rerrich Béla tér 1, H-6720 Szeged, Hungary

Funder

Departamento Administrativo de Ciencia, Tecnolog?a e Innovaci?n

Hungarian National Research, Development, and Innovation Office

Minciencias (Colombia)

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c06542

Reference53 articles.

1. Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

2. Black Phosphorus Gas Sensors

3. Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

4. Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics

5. High-Quality Black Phosphorus Atomic Layers by Liquid-Phase Exfoliation

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