Electron Injection Dynamics at the SILAR Deposited CdS Quantum Dot/TiO2 Interface-Reference-Cited by-同舟云学术

Electron Injection Dynamics at the SILAR Deposited CdS Quantum Dot/TiO2 Interface

Published:2015-08-26 Issue:35 Volume:119 Page:20357-20362
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Nakamura Ryosuke¹,Makuta Satoshi²,Tachibana Yasuhiro¹²³

Affiliation:

1. Science and Technology Entrepreneurship Laboratory, Office for University-Industry Collaboration, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

2. School of Aerospace, Mechanical and Manufacturing Engineering, RMIT University, Bundoora, VIC 3083, Australia

3. Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

Funder

Japan Science and Technology Agency

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b06900

Reference30 articles.

1. Ultrafast carrier dynamics in semiconductor quantum dots

2. Optical nonlinearities and carrier trapping dynamics in CdS and CuxS nanocrystals

3. Interfacial Carriers Dynamics of CdS Nanoparticles

4. The Relaxation Pathways of CdSe Nanoparticles Monitored with Femtosecond Time-Resolution from the Visible to the IR: Assignment of the Transient Features by Carrier Quenching

5. The pump power dependence of the femtosecond relaxation of CdSe nanoparticles observed in the spectral range from visible to infrared

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