Controllable Ground Magnetic States and Exchange Bias in LaMnO3 Thin Films by the Design of Stoichiometry Offset-Reference-Cited by-同舟云学术

Controllable Ground Magnetic States and Exchange Bias in LaMnO3 Thin Films by the Design of Stoichiometry Offset

Published:2021-12-30 Issue:1 Volume:126 Page:838-843
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Di¹,He Bin¹,Guo Jinrui¹,Zhang Nana¹,Shi Chaoqun¹,Han Yue²,Wang Qixiang²,Fang Hong²,Wang Jie²,Zhang Peng¹,Chen Yanan¹,Ren Miaojuan¹,Zhang Changwen¹,Lü Weiming¹²^ORCID

Affiliation:

1. Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China

2. Condensed Matter Science and Technology Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China

Funder

Taishan Scholar Foundation of Shandong Province

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c09943

Reference26 articles.

1. Emergent phenomena at oxide interfaces