Carrier Density, Effective Mass, and Nuclear Relaxation Pathways in Plasmonic Sn:In2O3 Nanocrystals-Reference-Cited by-同舟云学术

Carrier Density, Effective Mass, and Nuclear Relaxation Pathways in Plasmonic Sn:In2O3 Nanocrystals

Published:2020-12-10 Issue:51 Volume:124 Page:28220-28229
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Conti III Carl R.¹,Quiroz-Delfi Giovanni¹,Schwarck Joanna S.¹,Chen Banghao¹,Strouse Geoffrey F.¹^ORCID

Affiliation:

1. Florida State University, Department of Chemistry & Biochemistry, 102 Varsity Way Chemical Sciences Laboratory, Tallahassee 32306, Florida, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c09448

Reference68 articles.

1. Understanding the Plasmon Resonance in Ensembles of Degenerately Doped Semiconductor Nanocrystals

2. Tuning the Localized Surface Plasmon Resonance in Cu2–xSe Nanocrystals by Postsynthetic Ligand Exchange

3. Anisotropic Origins of Localized Surface Plasmon Resonance in n-Type Anatase TiO2 Nanocrystals

4. Tuning Plasmon Resonance of In2O3 Nanocrystals throughout the Mid-Infrared Region by Competition between Electron Activation and Trapping

5. Cyclotron Splittings in the Plasmon Resonances of Electronically Doped Semiconductor Nanocrystals Probed by Magnetic Circular Dichroism Spectroscopy

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