Enhancing MnBi<sub>2</sub>Te<sub>4</sub> Stability by Doping-Reference-Cited by-同舟云学术

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Enhancing MnBi₂Te₄ Stability by Doping

Published:2024-06-05 Issue:24 Volume:128 Page:10108-10119
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Saritas Kayahan¹^ORCID,Ghaffar Abdul²^ORCID,Krogel Jaron T.¹^ORCID,Ichibha Tomohiro²,Hongo Kenta³^ORCID,Maezono Ryo²,Reboredo Fernando A.¹

Affiliation:

1. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-2008, United States

2. School of Information Science, JAIST, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

3. Research Center for Advanced Computing Infrastructure, JAIST, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Basic Energy Sciences

Air Force Office of Scientific Research

Japan Society for the Promotion of Science

Asian Office of Aerospace Research and Development

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c00848

Reference120 articles.

1. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

2. Observation of Unconventional Quantum Spin Textures in Topological Insulators

3. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

5. Colloquium: Topological insulators

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