Tunable Band Gaps of InxGa1–xN Alloys: From Bulk to Two-Dimensional Limit-Reference-Cited by-同舟云学术

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Tunable Band Gaps of InxGa1–xN Alloys: From Bulk to Two-Dimensional Limit

Published:2018-03-02 Issue:12 Volume:122 Page:6930-6942
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang V.¹^ORCID,Wu Z. Q.¹,Kawazoe Y.²³,Geng W. T.⁴^ORCID

Affiliation:

1. Department of Applied Physics, Xi’an University of Technology, Xi’an 710054, China

2. New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Miyagi, Japan

3. Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chennai 603 203, Tamil Nadu, India

4. University of Science and Technology Beijing, Beijing 100083, China

Funder

Natural Science Foundation of Shaanxi Province

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b12401

Reference101 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Graphene transistors

4. Two-dimensional atomic crystals

5. The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes

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