Tailored Electronic Band Gap and Valance Band Edge of Nickel Oxide via p-Type Incorporation
Author:
Affiliation:
1. Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
2. State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing, Beijing 100083, P. R. China
Funder
Natural Science Foundation of Ningbo
Natural Science Foundation of Zhejiang Province
Zhejiang Province
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c01463
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4. Energetic Cost for Being “Redox-Site-Rich” in Pseudocapacitive Energy Storage with Nickel–Aluminum Layered Double Hydroxide Materials
5. Understanding the Stability of MAPbBr3 versus MAPbI3: Suppression of Methylammonium Migration and Reduction of Halide Migration
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